By Topic

Optical gain and lasing from band-engineered Ge-on-Si at room temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Jifeng Liu ; Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA ; Sun, Xiaochen ; Camacho-Aguilera, R. ; Yan Cai
more authors

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n+ Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.

Published in:

OptoElectronics and Communications Conference (OECC), 2010 15th

Date of Conference:

5-9 July 2010