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Intracavity quantum-well photodetection of a vertical-cavity surface-emitting laser

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4 Author(s)
Lim, S.F. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Li, G.S. ; Yuen, W. ; Chang-Hasnain, C.J.

We demonstrate the first intracavity InGaAs quantum-well photodetector within a VCSEL laser diode. Effective responsivity is as high as 0.23 A/W; dark current is less than 1 nA, limited by our noise floor. In this work, we present experimental results of the first VCSEL with an intracavity quantum-well photodetector. The quantum well with its embedded position prevents stray light from interfering with the power detection and monitoring while its thin active region minimizes the dark current.

Published in:

Semiconductor Laser Conference, 1996., 15th IEEE International

Date of Conference:

13-18 Oct. 1996

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