By Topic

Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Y. Iseri ; Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan ; H. Yamada ; T. Arakawa ; K. Tada
more authors

A Ge/SiGe coupled quantum well for optical modulators based on phase modulation was proposed and its electrorefractive characteristics are theoretically analyzed using the K·p perturbation theory. This structure is promising for low-voltage Mach Zehnder modulators.

Published in:

OECC 2010 Technical Digest

Date of Conference:

5-9 July 2010