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Optical properties and application of MOVPE-grown III-V nanowires

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4 Author(s)
J. Motohisa ; Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9 Sapporo 060-0814, Japan ; K. S. K. Varadwaj ; K. Tomioka ; T. Fukui

We report on the optical properties of III-V semiconductor nanowires (NWs) grown by by selective-area matalorganic vapor phase epitaxy and its application to photonic devices. Results for NWs containing heterostructures are mainly discussed.

Published in:

OECC 2010 Technical Digest

Date of Conference:

5-9 July 2010