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Properties of Source-Gated Transistors in polysilicon

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3 Author(s)
Sporea, R.A. ; Adv. Technol. Inst., Univ. of Surrey, Guildford, UK ; Shannon, J.M. ; Silva, S.R.P.

This paper describes some of the performance characteristics of self-aligned polysilicon Schottky Source-Gated Transistors (SGTs) made on glass by laser annealing of amorphous silicon. The threshold and Schottky barrier height are tuned by varying the dose of dopants in the bulk and under the source respectively. These devices are well suited for analog applications owing to their low saturation voltage, low drain field dependence of the current and intrinsic gain which is in excess of 1000 for well designed structures. Double drain operation leads to fT≈100MHz for non-optimized devices.

Published in:

Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on

Date of Conference:

18-21 July 2010