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Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

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4 Author(s)
Fallahazad, B. ; Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA ; Kim, Seyoung ; Colombo, Luigi ; Tutuc, E.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3492843 

We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 12 )

Date of Publication:

Sep 2010

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