We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Lever, L. ; Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK ; Ikonic, Zoran ; Valavanis, A. ; Cooper, J.D.
more authors

We describe a combined 6 × 6 k · p and one-band effective mass modelling tool to calculate absorption spectra in Ge-SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge-SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge-SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm.

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 22 )