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Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics

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5 Author(s)
Lever, L. ; Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds, UK ; Ikonic, Zoran ; Valavanis, A. ; Cooper, J.D.
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We describe a combined 6 × 6 k · p and one-band effective mass modelling tool to calculate absorption spectra in Ge-SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge-SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge-SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm.

Published in:

Lightwave Technology, Journal of  (Volume:28 ,  Issue: 22 )

Date of Publication:

Nov.15, 2010

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