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Vertical Oxide Homojunction TFTs of 0.8 V Gated by  \hbox {H}_{3}\hbox {PO}_{4} -Treated \hbox {SiO}_{2} Nanogranular Dielectric

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5 Author(s)
Jie Jiang ; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences , Ningbo, China ; Jia Sun ; Bin Zhou ; Aixia Lu
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Inorganic solid-state electrolyte film based on H3PO4-treated nanogranular SiO2 with high specific capacitance (8 μF/cm2) is developed for vertical indium-tin-oxide (ITO) homojunction thin-film transistors (TFTs) fabrication. Such proton conductor reduces the operating voltage of the vertical homojunction TFTs to 0.8 V due to the enhanced electric-double-layer capacitance. Vertical ITO TFTs gated by such dielectric exhibit a good performance, such as a high current output (> 10 Ma/cm2) a small subthreshold swing (<; 80 mV/dec), a good ohmic contact, and a large on-off ratio ( ~106). These low-voltage TFTs are very promising for next-generation battery-powered portable sensors.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 11 )