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Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices

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6 Author(s)
Yamaguchi, Y. ; Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan ; Hashimoto, H. ; Kimura, M. ; Hirako, M.
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In this letter, a magnetic-field area sensor using poly-Si micro Hall devices is reported. A matrix array of Hall devices is formed on a glass substrate using fabrication processes compatible with poly-Si thin-film transistors. Here, 3 × 3 Hall devices are arrayed every 1 × 1 mm, and the dimension of the principal part is less than 50 × 50 μm. A compensation technique of the characteristic variation is used, and it is confirmed that the area sensing is correctly conducted. This sensor presents a novel application using thin-film technologies for giant-micro flexible electronics.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 11 )