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{\bf SiO}_{bm x} Nanowires Grown via the Active Oxidation of Silicon

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3 Author(s)
Avi Shalav ; Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australia ; Taehyun Kim ; Robert G. Elliman

Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O2 partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the substrate and the residual O2. This review summarizes the important elements of SiOx NW growth under active oxidation conditions and includes some examples of more-complex multistructured SiOx NW morphologies that utilize the active oxidation process.

Published in:

IEEE Journal of Selected Topics in Quantum Electronics  (Volume:17 ,  Issue: 4 )