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Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

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5 Author(s)
Dhar, B.M. ; Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD, USA ; Özgün, R. ; Jung, B.J. ; Katz, H.E.
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A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, the patterning of positive and negative charges spatially on n- and p-type organic field effect transistors, respectively, on the same wafer. Using the proposed fabrication and threshold adjusting technique, the first organic FET-based CMOS inverter has been fabricated that employs threshold adjustment for both p- and n-type transistors to bias them so that the inverter has maximum gain.

Published in:

Electronics Letters  (Volume:46 ,  Issue: 19 )

Date of Publication:

Sept. 16 2010

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