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A Highly Linear Two-Stage Amplifier Integrated Circuit Using InGaP/GaAs HBT

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9 Author(s)
Kyunggon Choi ; Microwave Circuits & Syst. Lab., Sungkyunkwan Univ., Suwon, South Korea ; Minsu Kim ; HyungChul Kim ; Sungchan Jung
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This paper presents a linearized two-stage amplifier integrated circuit (IC), having an output power level of about 1 Watt, used for general purpose applications. A predistortion method, based on alignment of the nonlinear characteristics between the first- and the second-stage amplifiers, has been proposed and analyzed in order to enhance the linearization aspects. The resistors in the active bias circuits of both the stages are optimized to achieve the best cancellation conditions for the third-order intermodulation components. The two-stage amplifier IC, which is based on an InGaP/GaAs hetero-junction bipolar transistor (HBT) technology, has been designed and implemented for the 900 MHz band. An output 1 dB compression point (P1dB) of 29.6 dBm, a maximum third-order output intercept point (OIP3) of as high as 48.7 dBm at a two-tone average output power of 21 dBm have been obtained while having a quiescent current of 375 mA and a single bias supply of 5.5 V. The implemented amplifier is able to maintain its IMD3 performance below -60 dBc up to an output power of 21 dBm.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:45 ,  Issue: 10 )