Determination of interface structure and atomic arrangements for strained InAs/Ga1-xInxSb superlattices by high-resolution transmission electron microscopy

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The lattice structure of the InAs/Ga_1-xIn_xSb interface has been studied in cross-section by high-resolution transmission electron microscopy. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. The results suggest that interface formation is first driven by charge balance. The shift in the interplanar separations associated with this modulation may lead to distortions of the interfacial structure of Ga_1-xIn_xAs-like. The morphological evolution at GaAs-like interface is accompanied by interface misfit dislocations and compositional fluctuations near the interface associated with segregation.

Published in:
Journal of Applied Physics (Volume:108 , Issue: 6 )

Date of Publication: Sep 2010

Page(s):: 064508 - 064508-3
ISSN :: 0021-8979
Digital Object Identifier :: 10.1063/1.3481098
Product Type:: Journals & Magazines

Date of Current Version :: 23 September 2010
Issue Date :: Sep 2010

Author(s)

Quan, Maohua
School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People’s Republic of China
Guo, Fengyun ; Li, Meicheng ; Zhao, Liancheng