By Topic

Fabrication of PN junction capacitor using SiP technology on Si-based interposer wafer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Dai Fengwei ; Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China ; Wang Huijuan ; Wang Qidong ; Zhou Jing
more authors

The article relates to the fabrication of embedded P-N junction capacitors, using System-in-Package (SiP) technology, on a silicon interposer wafer with Through-Silicon-Via (TSV). The P-N junction capacitors are fabricated using current micromachining technologies, including etching high aspect-ratio, three-dimensional honeycomb structure and thermal oxidation, thermal dopant diffusion, sputtering, and metallization and so on. The fabricated capacitor displays high capacitance density compared with common two-dimensional (2D) P-N junction capacitors. Tests at high frequency (10 Mhz-40 GHz) were conducted to evaluate the properties of these capacitors. Test results show that the capacitors have a high capacitance density up to 12 nF/mm2 of wafer area, with reverse bias voltage of 1 V, which is about 10-12 times that of 2D semiconductor capacitors, and is attributed to the increased junction area inherent in the three-dimensional via structure. These capacitors can be used for decoupling under a wide frequency range from 300 MHz to 3.2 GHz. they show a low parasitic inductance by measuring. Capacitor has a characteristic that capacitance value also keeps up constant with the increase of frequency.

Published in:

Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on

Date of Conference:

16-19 Aug. 2010