Simulation of electric field uniformity in through silicon via filling

There are many factors which will affect the final result of TSV filling, such as ratio of the additives including accelerator, suppresser, leveler and so on. Complicated environment is also hard to control exactly. If we want to form the “bottom up” in the plating, there must be comprehensively consideration of all factors. Many studies have focused on the effect of additives on the plating uniformity. But in industrial production, the macro-uniformity is the primary consideration. In this paper, we are talking about the most important factor-the electric field. ANSYS is used to simulate the electric field distribution in order to find the most Optimal parameters. Considering some major factors in electroplating, an optimization model is suggested by simulation. And the non-uniformity is reduced to below 10%. Based on this, we have simulated the electroplating of microholes in the beginning of TSV filling. The uniformity of the electric field inside the hole is mainly determined by the adsorption of chemical additives, especially for the suppressor. Deeper of the adsorbed position of suppressor, better “bottom up” trend in the process of electroplating.