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Stability Improvement of Organic Thin-Film Transistors Using Stacked Gate Dielectrics

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3 Author(s)
Po-Yuan Lo ; Electron. & Optoelectron. Res. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan ; Pei-Wen Li ; Chan, Yi-Jen

Poly-3-hexylthiophene organic thin-film transistors (OTFTs) were fabricated with different kinds of stacked gate dielectrics, which exhibit an individual effective trap behavior. The transistor fabricated with a stacked gate dielectric in a donor-like trap behavior exhibits a significant current hysteresis loop, a large threshold voltage shift, and subthreshold swing changes during operation in the dark and under illumination. The device performance is improved using a stacked gate dielectric with acceptor-like traps. The mechanisms of OTFTs with an acceptor-like trap dielectric and a donor-like dielectric are discussed.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 11 )