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Improved Optical and ESD Characteristics for GaN-Based LEDs With an \hbox {n}^{-}\hbox {-GaN} Layer

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8 Author(s)
Chiang, T.H. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chiou, Y.Z. ; Chang, S.J. ; Wang, C.K.
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Nitride-based light-emitting diodes (LEDs) with an n- -GaN layer are proposed and fabricated. By providing a larger series resistance in the vertical direction, it was found that the n--GaN layer could enhance LED output intensity due to the enhanced current spreading. It was also found that LEDs with n--GaN layer thicknesses of 0.15, 0.2, and 0.25 μm could endure electrostatic discharge surges up to -1200, - 1800, and -3000 V, respectively.

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Device and Materials Reliability, IEEE Transactions on  (Volume:11 ,  Issue: 1 )