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The authors report the growth of β-Ga2O3 thin film by simple furnace oxidation of GaN thin film and the fabrication of a solar-blind β-Ga2O3 photodetector (PD). For the PD with an active area of 4.4 mm2 and 5-V applied bias, it was found that measured current was only 1.39 × 10-10 A in the dark and increased to 2.03 × 10-5 A when illuminated with 260-nm ultraviolet (UV) light (41.27 μW/cm2). It was also found that the fabricated PD exhibits an extremely large deep-UV-to-visible rejection ratio.
Date of Publication: April 2011