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Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence

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4 Author(s)
Ito, Masahiko ; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan ; Imakita, Kenji ; Fujii, Minoru ; Hayashi, Shinji

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Comprehensive studies on nonlinear refractive indices (n2) of SiO2 films containing Si nanocrystals and/or nanoclusters (SiO2:Si-ncs) are performed. The comparison of the nonlinear refractive indices with the electron spin resonance signals reveals that defect states play a major role in the large n2 when the annealing temperature is low, i.e., when Si nanoclusters exist in films. On the other hand, when Si nanocrystals are grown by high-temperature annealing, the contribution of defect states becomes small and that of the quantized electronic states of Si nanocrystals becomes large. The present results demonstrate that both the defect states and the quantized electronic states should be taken into account to explain the origin of large n2 of SiO2:Si-ncs and to optimize the structure to maximize n2.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 6 )