By Topic

Reduction of shorts between polysilicon word lines on a 4 Meg DRAM product

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Todoroff, J.A. ; MiCRUS, Hopewell Junction, NY, USA

A significant reduction in defects in a polysilicon level was achieved by a team of process and diagnostic engineers. This paper will describe the methodology. Electrical measurements on a defect test site were used together with surface particle counter data and automated optical inspection to understand the problems and determine the success of various actions. Improvements were made at the oxidation, polysilicon deposition, anneal, photolithography, and RIE operations

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996

Date of Conference:

12-14 Nov 1996