Referenced Items are not available for this document.
The conventional continuous scan and Delay-ID, lin methods of negative bias temperature instability characterization are not applicable for polycrystalline silicon thin-film transistors due to significant recovery effect and mobility degradation, respectively. An improved on-the-fly (OTF) method is proposed to simultaneously extract the threshold voltage shift and mobility degradation. In addition, the improved OTF method is more accurate than the continuous scan due to less recovery effect. The exponents of reaction-diffusion mechanism can be clearly determined using the new method.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
11
)
Date of Publication: Nov. 2010
- Page(s):
- 3186 - 3189
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11596965
- Digital Object Identifier :
- 10.1109/TED.2010.2068550
- Product Type:
- Journals & Magazines
- Date of Publication :
- 20 September 2010
- Date of Current Version :
- 21 October 2010
- Issue Date :
- Nov. 2010
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
