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GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si

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8 Author(s)
Chul-Ho Lee ; Dept. of Phys. & Astron., Seoul Nat. Univ., Seoul, South Korea ; Young Joon Hong ; Yong-Jin Kim ; Jinkyoung Yoo
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We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-μm-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homojunction with GaN/In1-xGaxN multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:17 ,  Issue: 4 )

Date of Publication:

July-Aug. 2011

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