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A non-local impact ionization/lattice temperature model for VLSI double-gate ultrathin SOI NMOS devices

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2 Author(s)
Ker-Wie Su ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; J. B. Kuo

This paper presents an analytical drain current model for VLSI double-gate ultrathin SOI NMOS devices considering both the nonlocal impact ionization effect and the lattice temperature effect. Supported by the experimental data, the analytical model predicts that the double-gate SOI NMOS device has a more obvious nonlocal impact ionization effect and a higher lattice thermal effect as compared to the single-gate device

Published in:

IEEE Transactions on Electron Devices  (Volume:44 ,  Issue: 2 )