Cart (Loading....) | Create Account
Close category search window
 

Silicon electro-optic modulator based on a three terminal device integrated in a low-loss single-mode SOI waveguide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Cutolo, Antonello ; Dipt. di Ingegneria Elettrica, Naples Univ., Italy ; Iodice, M. ; Spirito, P. ; Zeni, L.

We analyze, from a theoretical point of view, a novel silicon optical amplitude-phase modulator integrated into a SOI (silicon on insulator) optical waveguide and based on a three terminal electronic structure which gives rise to definite advantages in comparison with a classical p-i-n diode based modulator. The proposed device utilizes the free carrier dispersion effect to produce the desired refractive index and absorption coefficient variations. The MEDICI two-dimensional (2-D) semiconductor device simulator has been used to analyze the electrical operation, with reference to the free carrier concentration injected into the optical channel, its uniformity and the required current density and electrical power. The optical investigation was carried out by means of FDM (finite difference method), EIM (effective index method), and BPM (beam propagation method) tools, giving rise to a complete evaluation of the properties of our device. We report the results for both the amplitude and phase modulators, paying attention to the static and the dynamic behavior. In particular, an amplitude modulation of 20%, with an injection power of about 126 mW, and a switching time of 5.6 ns can be achieved theoretically, Furthermore, as a phase modulator, the device exhibits a very high figure of merit, predicting an induced phase shift per volt per millimeter of about 215°, for a injection power of about 43 mW, and a switching time shorter than 3.5 ns

Published in:

Lightwave Technology, Journal of  (Volume:15 ,  Issue: 3 )

Date of Publication:

Mar 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.