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Laser diodes integrated with butt-jointed spotsize converter fabricated on 2-in wafer

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13 Author(s)
Wada, M. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Okamoto, M. ; Kishi, K. ; Kadota, Y.
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Laser diodes integrated with spotsize converters by butt-joint technology combined with selective area metal organic vapor phase epitaxial (MOVPE) growth have been successfully fabricated. Satisfactory uniformity, reproducibility (>99%) and tolerance for low threshold current, a narrow emitted beam, and low optical coupling loss to fiber (<-2.4 dB) are obtained by using 2-in full wafer fabrication technology in the experimental fabrication. To investigate the tolerance in fabrication, the characteristic dependence on the variation of the wet etching time just before the butt-joint MOVPE growth and also on the mesa stripe width are investigated. A wide tolerance for these fabrication parameters is confirmed. The results indicate that the butt-joint technology is a useful and reliable process for realizing spotsize converters of the present type and also suggest that the technology is widely applicable to various photonic integrated circuits

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Lightwave Technology, Journal of  (Volume:15 ,  Issue: 3 )