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Dielectric Properties of SiC Nanowires With Different Chemical Compositions

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3 Author(s)
Anna Jänis ; Swedish Defence Research Agency , Divison of Information Systems, Linköping, Sweden ; Yiming Yao ; Uta Klement

The investigated SiC nanowires were prepared by the “shape memory process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e., with varying amount of Si, C, and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz, which revealed that the permittivity, both real and imaginary parts, depends mostly on the C content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.

Published in:

IEEE Transactions on Nanotechnology  (Volume:10 ,  Issue: 4 )