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The investigated SiC nanowires were prepared by the “shape memory process” technique. Depending on the processing parameters, nanowires with different chemical compositions, i.e., with varying amount of Si, C, and O were obtained. The permittivity of the SiC nanowires was measured in the frequency range between 1 and 18 GHz, which revealed that the permittivity, both real and imaginary parts, depends mostly on the C content of the nanowires. A higher C concentration in the nanowires gives rise to a higher permittivity.