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Enhancement of magnetoresistance by hydrogen ion treatment for current-perpendicular-to-plane giant magnetoresistive films with a current-confined-path nano-oxide layer

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10 Author(s)
Yuasa, H. ; Toshiba Corporation, Corporate R & D Center, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Hara, M. ; Murakami, S. ; Fuji, Y.
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We have enhanced magnetoresistance (MR) for current-perpendicular-to-plane giant-magnetoresistive (CPP-GMR) films with a current-confined-path nano-oxide layer (CCP-NOL). In order to realize higher purity in Cu for CCPs, hydrogen ion treatment (HIT) was applied as the CuOx reduction process. By applying the HIT process, an MR ratio was increased to 27.4% even in the case of using conventional FeCo magnetic layer, from 13.0% for a reference without the HIT process. Atom probe tomography data confirmed oxygen reduction by the HIT process in the CCP-NOL. The relationship between oxygen counts and MR ratio indicates that further oxygen reduction would realize an MR ratio greater than 50%.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 11 )