Cart (Loading....) | Create Account
Close category search window
 

Single crystal-like selection rules for unipolar-axis oriented tetragonal Pb(Zr,Ti)O3 thick epitaxial films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Nakajima, Mitsumasa ; Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan ; Fujisawa, Takashi ; Ehara, Yoshitaka ; Yamada, Tomoaki
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3488015 

We investigated the polarized Raman spectra of a strain-free, unipolar-axis oriented tetragonal Pb(Zr,Ti)O3 thick epitaxial film. We evaluated the single crystal-like selection rules of the A1- and E-symmetry components, and found an anomalous behavior in the angular dependence of the A1(1TO)-mode intensity similar to that observed in high-Tc superconductor single crystals. Raman tensor analyses of the A1(1TO) mode revealed complex phases may exist between two independent Raman-tensor components even in the single 180° domain state.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 11 )

Date of Publication:

Sep 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.