By Topic

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Castiglia, A. ; LASPE, ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland ; Carlin, J.-F. ; Feltin, E. ; Cosendey, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer positioned below an Al0.07Ga0.93N bottom cladding. Such devices are compared to standard InGaN based lasers looking at threshold current density, electrical characteristics, and far-field emission. Threshold current densities of 4 kA/cm2 and slope efficiencies of ∼0.6 W/A (for uncoated facets) have been achieved in AlInN containing devices. Lower mode leakage in the substrate is highlighted by a better transversal far-field pattern resulting in an improved beam quality.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 11 )