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Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors

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10 Author(s)
Nadar, S. ; Groupe d''Etude des Semiconducteurs, Univ. Montpellier 2 and CNRS, UMR 5650, Montpellier 34095, France ; Videlier, H. ; Coquillat, D. ; Teppe, F.
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GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 μm and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 5 )