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Nonvolatile memories by using charge traps in silicon-rich oxides

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5 Author(s)
Lim, Keun Yong ; Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Republic of Korea ; Kim, Min Choul ; Hong, Seung Hui ; Choi, Suk-Ho
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The nonvolatile memory characteristics of silicon-rich oxide (SRO, SiOx) grown at room temperature for charge-trapping layer are first reported and shown to exhibit a strong dependence on oxygen content (x). The memory window that is estimated by capacitance-voltage curves monotonically decreases with increasing x from 1.0 to 1.8, possibly resulting from the x-dependent variation in the Si suboxide states responsible for the charge traps, as evidenced by x-ray photoelectron spectroscopy. The density of the charge traps is estimated to be (3.9–8.8)×1012 cm-2 for x=1.0–1.4. The charge-loss rate sharply decreases at x=1.2, but by further increase in x above 1.2, it gradually increases, which can be explained by the lowered SRO/SiO2 barrier due to the increased optical band gap of SRO at larger x

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 3 )