By Topic

Controlled growth and surface morphology evolution of m-oriented GaN faceted-domains on SiO2-patterned m-plane sapphire substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Seo, Yeonwoo ; Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, 1 Hoegi-dong Dongdaemun-gu, Seoul 130-701, Republic of Korea ; Kim, Chinkyo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3488022 

m-oriented GaN faceted-domains were grown on SiO2-patterned m-plane sapphire substrates with no low-temperature-grown buffer layers, and their surface morphology evolution was investigated. The preferred crystallographic orientations of GaN domains are found to be sensitively influenced by substrate temperature. The growth rate of m-oriented GaN faceted-domains along the c-direction is found to be significantly suppressed after filling up the circular-shaped window regions. Our simple model calculation reveals that this can be explained by the minimization of surface energy increment per volume increment, and that the growth along the c-direction is energetically not favored until the domain reaches a critical size.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 10 )