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Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes

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6 Author(s)
Hong, Kipyo ; Department of Chemical Engineering, Polymer Research Institute, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea ; Kim, Se Hyun ; Yang, Chanwoo ; Jang, Jaeyoung
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We improved the device performance of N,N-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm2/Vs, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 10 )

Date of Publication:

Sep 2010

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