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Device characteristics of HfON charge-trap layer nonvolatile memory

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2 Author(s)
Lee, Tackhwi ; Microelectronics Research Center, R9950, Department of Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 ; Banerjee, Sanjay K.

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The authors studied the device characteristics of thin HfON charge-trap layer nonvolatile memory in a TaN/Al2O3/HfON/SiO2/p-Si structure. A large memory window and fast erase speed, as well as good retention time, were achieved by using the NH3 nitridation technique to incorporate nitrogen into the thin HfO2 layer, which causes a high electron-trap density in the HfON layer. The higher dielectric constant of the HfON charge-trap layer induces a higher electric field in the tunneling oxide at the same voltage compared to non-nitrided films and, thus, creates a high Fowler–Nordheim tunneling current to increase the erase and programming speed. The trap level energy in the HfON layer was calculated by using an amphoteric model.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:28 ,  Issue: 5 )