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The effects of electron beam irradiation on the electrical and the optical properties of zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films, prepared by the sol-gel technique, were investigated. The grain size, surface morphology, sheet resistance, optical constants, absorption edge, and direct and indirect optical band gaps of these films were analyzed before and after exposure to electron beam. The decrease in the structural homogeneity and the crystallinity of the films after exposure to electron irradiation is observed. The irradiation causes increase in the sheet resistance and blueshift in the absorption edge for both ZnO and ZnO:Al films. The change in carrier concentration due to doping as well as the exposure to electron beam are responsible for the modified electrical and optical properties.