Cart (Loading....) | Create Account
Close category search window
 

Electron and impurity states in GaN/AlGaN coupled quantum dots: Effects of electric field and hydrostatic pressure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Xia, Congxin ; Department of Physics, Henan Normal University, Xinxiang 453007, China ; Zeng, Zaiping ; Wei, Shuyi

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3481437 

Based on the effective mass approximation, the ground-state donor binding energy of impurity located at the surface of the zinc-blende (ZB) GaN/AlGaN symmetric coupled quantum dots (SCQDs) is investigated variationally, considering the combined effects of the electric field to the right (along the growth direction) and the hydrostatic pressure. Numerical results show that the impurity localized inside the left dot, the donor binding energy is insensitive to the middle barrier width of the ZB GaN/AlGaN SCQDs if the middle barrier width is large. While the hydrostatic pressure increases the donor binding energy for any electric field and impurity position. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy of impurity localized inside left dot. In addition, the competition effects between the electric field and hydrostatic pressure (between the electric field and quantum confinement) on the donor impurity states in the ZB GaN/AlGaN SCQDs have also been investigated in detail, which may be very interesting to understand the impurity states in semiconducting nanostructures.

Published in:

Journal of Applied Physics  (Volume:108 ,  Issue: 5 )

Date of Publication:

Sep 2010

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.