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Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template

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7 Author(s)
Niu, G. ; Ecole Centrale de Lyon, INL/UMR CNRS-5512, 36 Avenue Guy de Collongue, 69134 Ecully, France ; Largeau, L. ; Saint-Girons, G. ; Vilquin, B.
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This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd2O3 crystalline template. A smooth two-dimensional Ge layers is obtained from the coalescence of initially three-dimensional Ge islands grown in the Volmer–Weber mode. Ge takes its bulk lattice parameter at the very early stages of its growth. A detailed x-ray pole figure analysis reveals that the epitaxial relationship between the layers and the Si substrate is [1–10]Ge(111)||[-110]Gd2O3(111)||[1–10]Si(111) and that microtwins are formed in the Ge layer.

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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films  (Volume:28 ,  Issue: 5 )