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Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics

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7 Author(s)
Ren, H. ; Department of Electrical and Computer Engineering, Plasma Processing and Technology Laboratory, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA ; Sinha, H. ; Sehgal, A. ; Nichols, M.T.
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The surface potential due to charge accumulation during vacuum ultraviolet irradiation of high-k and low-k thin dielectric films is measured. Measurement of the substrate current, which is the sum of the charge-accumulation and photoinjection currents, allows an in situ monitoring of the charge accumulation during irradiation. The relationship between the substrate current and the calculated in situ surface potential is also found, eliminating the need for a separate surface-potential measurement. With a high photon dose, the surface potential and substrate current reach a steady-state value with no further net charge accumulation.

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Applied Physics Letters  (Volume:97 ,  Issue: 7 )