By Topic

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
16 Author(s)
Bar, M. ; Solar Energy Research, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner-Campus, Hahn-Meitner-Platz 1, 14109 Berlin, Germany ; Wimmer, M. ; Wilks, R.G. ; Roczen, M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3462316 

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 °C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si–O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5±2) nm after SPC could be estimated.

Published in:

Applied Physics Letters  (Volume:97 ,  Issue: 7 )