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Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

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5 Author(s)
Arora, Ashish ; Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India ; Ghosh, Sandip ; Arora, B.M. ; Malzer, Stefan
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Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al0.3Ga0.7As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm||y) and narrow width (10 and 20 μm||x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E||x, compared to E||y. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for E||y. Through calculations based on the Bir–Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells.

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Applied Physics Letters  (Volume:97 ,  Issue: 8 )