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Testing the Temperature Limits of GaN-Based HEMT Devices

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12 Author(s)
Maier, D. ; Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm, Germany ; Alomari, M. ; Grandjean, Nicolas ; Carlin, J.-F.
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The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500°C, InAlN/GaN HEMTs have been operated up to 900°C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.

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Device and Materials Reliability, IEEE Transactions on  (Volume:10 ,  Issue: 4 )