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Enhanced damage in bipolar devices at low dose rates: effects at very low dose rates

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3 Author(s)
Johnston, A.H. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Lee, C.I. ; Rax, B.G.

The effect of very low dose rate irradiation is investigated for several linear bipolar devices that are sensitive to enhanced low dose-rate damage, including one device with super-β input transistors. New results are included at 0.001 and 0.002 rad(Si)/s. Irradiations at elevated temperature at high dose rate are compared with room temperature irradiation at very low dose rate. Possible mechanisms for enhanced damage are discussed

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )

Date of Publication:

Dec 1996

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