Cart (Loading....) | Create Account
Close category search window
 

Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Schmidt, D.M. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Wu, A. ; Schrimpf, R.D. ; Fleetwood, D.M.
more authors

Ionizing-radiation-induced gain degradation in lateral PNP bipolar junction transistors is due to an increase in base current as a result of recombination at the surface of the device. A qualitative model is presented which identifies the physical mechanism responsible for excess base current. The increase in surface recombination velocity due to interface traps results in an increase in excess base current and the positive oxide charge moderates the increase in excess base current and changes the slope of the current-voltage characteristics. Analytical and empirical models have been developed to quantitatively describe the excess base current response to ionizing radiation. It is shown that the surface recombination velocity dominates the excess base current response to total dose

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )

Date of Publication:

Dec 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.