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Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

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8 Author(s)
LaBel, K.A. ; NASA Goddard Space Flight Center, Greenbelt, MD, USA ; Gates, M.M. ; Moran, A.K. ; Kim, H.S.
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This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )