By Topic

Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
LaBel, K.A. ; NASA Goddard Space Flight Center, Greenbelt, MD, USA ; Gates, M.M. ; Moran, A.K. ; Kim, H.S.
more authors

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co60 irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )