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Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs

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8 Author(s)
Titus, J.L. ; Naval Surface Warfare Center, Crane, IN, USA ; Wheatley, C.F. ; Allenspach, M. ; Schrimpf, R.D.
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For the first time, experimental observations and numerical simulations show that the impact energy of the test ion influences the single-event gate rupture (SEGR) failure thresholds of vertical power MOSFETs. Current testing methodology may produce false hardness assurance

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )

Date of Publication:

Dec 1996

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