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SEGR and SEB in n-channel power MOSFETs

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10 Author(s)
Allenspach, M. ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Dachs, C. ; Johnson, G.H. ; Schrimpf, R.D.
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For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 6 )

Date of Publication:

Dec 1996

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