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SEU-hardened storage cell validation using a pulsed laser

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7 Author(s)
R. Velazco ; LSR, IMAG, Grenoble, France ; T. Calin ; M. Nicolaidis ; S. C. Moss
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Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrence

Published in:

IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 6 )