Referenced Items are not available for this document.
The impact of technology trends on the SEU hardness of epitaxial CMOS SRAMs is investigated using three-dimensional simulation. We study trends in SEU susceptibility with parameter variations across and within technology generations. Upset mechanisms for various strike locations and their dependence on gate-length scaling are explored. Such studies are useful for technology development and providing input for process and design decisions. An application of SEU simulation, to the development of a 0.5-μm radiation-hardened CMOS SRAM is presented
Published in:
Nuclear Science, IEEE Transactions on
(Volume:43
,
Issue:
6
)
Date of Publication: Dec 1996
- Page(s):
- 2797 - 2804
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 5498440
- Digital Object Identifier :
- 10.1109/23.556869
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1996
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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