Referenced Items are not available for this document.
Structures with quantum dots InAs on surface GaAs of a various thickness and at various temperatures by molecular beam epitaxy have been fabricated. Effects of growth conditions on sizes and density of quantum dots have been studied.
Published in:
Micro/Nanotechnologies and Electron Devices (EDM), 2010 International Conference and Seminar on
Date of Conference: June 30 2010-July 4 2010
- Page(s):
- 99 - 100
- Print ISBN:
- 978-1-4244-6626-9
- INSPEC Accession Number:
- 11524681
- Conference Location :
- Novosibirsk
- Digital Object Identifier :
- 10.1109/EDM.2010.5568648
- Product Type:
- Conference Publications
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